A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 by the sol–gel method has many surface defects, resulting a high density of interface states with active layer TFT, which then leads to poor stability devices. We modified it atomic deposition (ALD) technology that deposited Al2O3 on dielectric layer, finally fabricated TFT device ALD. electrical performance bias laminated greatly improved, subthreshold swing was reduced from 147 88 mV/decade, on/off-state current ratio increased 4.24 × 106 4.16 108, threshold voltage shift 1.4 0.7 V after 5-V is applied for 800 s.